Q5 image intensifier tube
Factory-direct IIT for night vision OEMs and military projects – 15+ years experience, stable lead time, OEM/ODM support.
Q5-A
Q5-A image intensifier tube features a Gen3 GaAs photocathode with flagship FOM≥2200+, ≥68 lp/mm resolution, SNR≥32, low EBI and high gain, plus P43/P45 green/white options, gated and externally adjustable gain/brightness. It delivers outstanding contrast and stability under ultra-low light, dynamic lighting and harsh environments.
With rugged design and wide temperature range, Q5-A is engineered for demanding military applications, including helmet-mounted goggles, precision weapon sights, vehicle/naval observation and long-range reconnaissance/ISR platforms.
Compatibility:QVS7/QVS31/QVS14/QVS18
Certified:
Q5-B
Q5-B image intensifier tube integrates a Gen3 GaAs photocathode and 2000+ FOM with ≥64 lp/mm resolution, SNR≥32, low EBI and high gain, plus P43/P45 green/white phosphor options, gated and externally adjustable gain/brightness and flexible interfaces, delivering sharp, low-noise images under ultra-low light and harsh lighting.
Its long life, wide temperature tolerance and optimized cost make Q5-B a high-performance, high value solution for helmet-mounted goggles, weapon sights, long-range surveillance, law-enforcement and border/coastal security systems.
Compatibility:QVS7/QVS31/QVS14/QVS18
Certified:
Q5-C
Q5-C image intensifier tube incorporates a Gen3 GaAs photocathode with FOM≥1800, ≥60 Lp/mm resolution, SNR≥30 and low EBI, plus P43/P45 options and gated/adjustable power solutions, ensuring sharp, low-noise images under ultra-low light and harsh conditions.
Its optimized design reduces system cost while maintaining reliability, delivering high performance with excellent cost-efficiency, ideal for helmet-mounted goggles, weapon sights, surveillance and law-enforcement applications.
Compatibility:QVS7/QVS31/QVS14/QVS18
Certified:
| Parameter | A | B | C | Unit |
|---|---|---|---|---|
| FOM | 2200–2400 | 2000–2200 | 1800–2000 | / |
| Photocathode useful diameter | ≥17.5 | mm | ||
| Cathode material | GaAs | / | ||
| Phosphor powder | P43/P45 | / | ||
| Photocathode sensitivity | 2000 | 2000 | 1800 | μA/Lm |
| SNR | ≥32 | ≥32 | ≥30 | / |
| Resolution | ≥68 | ≥64 | ≥60 | Lp/mm |
| Luminance gain | ≥10000 | Cd/m²/lx | ||
| Maximum output brightness | 4–12 | Cd/m² | ||
| EBI | ≤0.25 | μlx | ||
| Parameter | A | B | C | Unit |
|---|---|---|---|---|
| Input window | AVG glass | / | ||
| Output window | Inverting spherical (SR40)/Inverting flat/Non-inverting spherical (SR40)/Non-inverting flat | / | ||
| Input current @3V | ≤25 | mA | ||
| Input voltage | 2.2–3.4 | V | ||
| Weight | ≤75 | g | ||
| Power supply | Gated/External gain adjustment/External brightness adjustment | / | ||
| Electrical interface | Touch type/Lead type/Pigtail | / | ||
| Operating temperature | -45~+55 | ℃ | ||
| Storage temperature | -45~+70 | ℃ | ||